Light sensor circuit, light sensor device, and display device

ABSTRACT

A photo sensor circuit includes: a photo transistor; a first switching transistor; a second switching transistor; and a capacitance element. The photo transistor includes: a gate connected to a first wiring; a source connected to a second wiring; and a drain. The first switching transistor includes: a gate connected to a third wiring; a source connected to a fourth wiring; and a drain connected to the drain of the photo transistor. The capacitance element includes: a first terminal connected to the drain of the photo transistor; and a second terminal connected to the source of the first switching transistor. The second switching transistor includes: a gate connected to a gate line; a source connected to a signal line; and a drain connected to the first terminal of the capacitance element. The photo transistor, first switching transistor, and second transistor each include an oxide semiconductor layer as a channel layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.17/024,725, filed Sep. 18, 2020, which is a continuation application ofInternational Application No. PCT/JP2019/009306, filed on Mar. 8, 2019,which claims priority to Japanese Patent Application No. 2018-052337,filed on Mar. 20, 2018. The contents of these applications areincorporated herein by reference in their entirety.

TECHNICAL FIELD

The present invention relates to light sensor circuits or photo sensorcircuits, and more particularly the present invention can be applied toa light sensor circuit (or a photo sensor circuit), a light sensordevice (or a photo sensor device), and a display device each of whichuses oxide semiconductors.

BACKGROUND ART

Japanese Patent Application Laid-Open No. 2011-243950 (PLT 1) andJapanese Patent Application Laid-Open No. 2009-182194 (PLT2), in whichphoto sensing circuits and photo sensor elements using oxidesemiconductors are disclosed, are proposed.

CITATION LIST Patent Literature

PLT 1: Japanese Patent Application Laid-Open No. 2011-243950

PLT 2: Japanese Patent Application Laid-Open No. 2009-182194

SUMMARY OF INVENTION Technical Problem

An oxide semiconductor transistor has a degradation mode that isreferred to as light negative bias degradation in which the thresholdvoltage of the oxide semiconductor transistor greatly changes when anegative bias is applied to the oxide semiconductor while beingirradiated with light. In addition, an oxide semiconductor transistorhas a characteristic that, if once the oxide semiconductor transistor isirradiated with light, the drain current of the oxide semiconductortransistor decreases very slowly even after the irradiation of the lightis stopped. Therefore, there is a problem that it is difficult to use anoxide semiconductor transistor as a photo sensor element.

An object of the present invention is to provide a photo sensor circuitthat uses oxide semiconductor transistors and the operation of which isstable.

Problems other than the above and new features will be explicitly shownby the descriptions of this specification and the accompanying drawings.

Solution to Problem

The outlines of typical aspects according to the present invention canbriefly be described as follows.

To put it concretely, a photo sensor circuit includes: a phototransistor; a first switching transistor; a second switching transistor;and a capacitance element. The photo transistor includes: a gateconnected to a first wiring; a source connected to a second wiring; anda drain. The first switching transistor includes: a gate connected to athird wiring; a source connected to a fourth wiring; and a drainconnected to the drain of the photo transistor. The capacitance elementincludes: a first terminal connected to the drain of the phototransistor; and a second terminal connected to the source of the firstswitching transistor. The second switching transistor includes: a gateconnected to a gate line; a source connected to a signal line; and adrain connected to the first terminal of the capacitance element. Eachof the photo transistor, the first switching transistor, and the secondtransistor includes an oxide semiconductor layer as a channel layer.

Furthermore, a photo sensor device includes: plural gate lines; pluralsignal lines; and plural photo sensor circuits connected to the pluralgate lines and the plural signal lines in such a way that each of theplural photo sensor circuits is connected to one of the plural gatelines and one of the plural signal lines. Each of the plural photosensor circuits includes: a photo transistor; a first switchingtransistor; a second switching transistor; and a capacitance element.The photo transistor includes: a gate connected to a first wiring; asource connected to a second wiring; and a drain. The first switchingtransistor includes: a gate connected to a third wiring; a sourceconnected to a fourth wiring; and a drain connected to the drain of thephoto transistor. The capacitance element includes: a first terminalconnected to the drain of the photo transistor; and a second terminalconnected to the source of the first switching transistor. The secondswitching transistor includes: a gate connected to the relevant gateline; a source connected to the relevant signal line; and a drainconnected to the first terminal of the capacitance element. Each of thephoto transistor, the first switching transistor, and the secondtransistor includes an oxide semiconductor layer as a channel layer.

Furthermore, a display device includes a display panel having a displayregion. The display region includes display pixels and a photo sensorcircuit. The photo sensor circuit includes: a photo transistor; a firstswitching transistor; a second switching transistor; and a capacitanceelement. The photo transistor includes: a gate connected to a firstwiring; a source connected to a second wiring; and a drain. The firstswitching transistor includes: a gate connected to a third wiring; asource connected to a fourth wiring; and a drain connected to the drainof the photo transistor. The capacitance element includes: a firstterminal connected to the drain of the photo transistor; and a secondterminal connected to the source of the first switching transistor. Thesecond switching transistor includes: a gate connected to a gate line; asource connected to a signal line; and a drain connected to the firstterminal of the capacitance element. Each of the photo transistor, thefirst switching transistor, and the second transistor includes an oxidesemiconductor layer as a channel layer.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a cross-sectional view for schematically explaining theillustrative structure of an oxide semiconductor transistor used for aphoto sensor device according to an example.

FIG. 2 is a cross-sectional view for schematically explaining theillustrative structure of a photo transistor shown in FIG. 1.

FIG. 3 is a cross-sectional view for schematically explaining theillustrative structure of a switching transistor shown in FIG. 1.

FIG. 4 is a diagram showing the characteristics of the drain current ofthe photo transistor without light irradiation.

FIG. 5 is a diagram showing the characteristics of the drain current ofthe photo transistor with light irradiation.

FIG. 6 is a circuit diagram for explaining the illustrativeconfiguration example of a photo sensor circuit according to theexample.

FIG. 7 is a block diagram showing the illustrative entire configurationof the photo sensor device according to the example.

FIG. 8 is a timing chart for explaining the behavior example of thephoto sensor device according to the example.

FIG. 9 is a characteristic diagram for explaining the characteristic ofthe photoelectric current of an oxide semiconductor transistor accordingto a comparative example.

FIG. 10 is a diagram for explaining the photoelectric current of theoxide semiconductor transistor according to the comparative example.

FIG. 11 is a diagram for explaining the photoelectric current of anoxide semiconductor transistor according to the example.

FIG. 12 is a diagram for illustratively showing the gate bias potential(Vg) of the gate electrode of the oxide semiconductor transistor at thetime of a reset pulse being applied in FIG. 11.

FIG. 13 is a diagram for illustratively showing the drain bias potential(Vd) of the drain electrode of the oxide semiconductor transistor at thetime of the reset pulse being applied in FIG. 11.

FIG. 14 is a plan view conceptually showing a display device accordingto Application Example 1.

FIG. 15 is a plan view conceptually showing a display device accordingto Application Example 2.

FIG. 16 is a plan view conceptually showing a display device accordingto a modification example.

FIG. 17 is a circuit diagram showing a configuration example of adisplay pixel and a photo sensor circuit that can be adopted for thedisplay device according to the modification example.

DESCRIPTION OF EMBODIMENTS

Hereinafter, the respective embodiments of the present invention will beexplained in reference to the accompanying drawings.

Here, the present disclosures are mere examples, and it is to beunderstood that appropriate modifications, which can be easily come upwith by those skilled in the art without deviating from the gist of thepresent invention, fall within the scope of the present invention. Inaddition, there are some cases where, in the accompanying drawings, thewidths, thicknesses, shapes, and the like of respective portions of theembodiments are schematically depicted differently from what theembodiments really are, but these depictions are mere examples, so thatthe interpretation of the present invention is not limited to thesedepictions.

In addition, in this specification and the accompanying drawings, thesame components as components that have appeared in already-describeddrawings are given the same reference signs, and detailed explanationsabout them may be omitted accordingly.

EXAMPLE

(Element Structure of Photo Sensor Element)

FIG. 1 is a cross-sectional view for schematically explaining theillustrative structure of an oxide semiconductor transistor used for aphoto sensor device according to an example. FIG. 2 is a cross-sectionalview for schematically explaining the illustrative structure of a phototransistor 101 shown in FIG. 1. FIG. 3 is a cross-sectional view forschematically explaining the illustrative structure of a switchingtransistor 102 shown in FIG. 1.

A photo sensor device 1 according to the example includes plural photosensor circuits SC. In FIG. 1, one photo transistor 101, one switchingtransistor 102, and a capacitance element 103, which are used in eachphoto sensor circuit SC, are illustratively depicted. Both the phototransistor 101 and the switching transistor 102 are formed using oxidesemiconductor transistors.

The photo transistor 101 includes, as shown in FIG. 1 and FIG. 2, a gateelectrode 12 b, an oxide semiconductor layer 14 b, a drain electrode 15b, and a source electrode 15 c. To put it concretely, the phototransistor 101 is an element having a lower gate structure in which agate electrode 12 b is formed to the lower side of the oxidesemiconductor layer 14 b, that is, a bottom gate type three terminal (agate, a source, and a drain) element, and the photo transistor 101 has abottom-gate top-contact structure (also referred to an invertedstaggered structure).

The switching transistor 102 includes, as shown in FIG. 1 and FIG. 3, agate electrode 12 a, an oxide semiconductor layer 14 a, a sourceelectrode 15 a, the drain electrode 15 b, and a back gate electrode 17.In other words, the switching transistor 102 is a bottom gate type fourterminal (a gate, a source, a drain, and a back gate) element, so thatthe switching transistor 102 has a configuration in which the back gateelectrode 17 is added to an inverted staggered structure. For example,the switching transistor 102 can be formed as a dual gate drive elementin which both gate electrode 12 a and back gate electrode 17 are driven.In addition, it is also conceivable that the switching transistor 102 isconfigured in such a way that the back gate electrode 17 is connected tothe source electrode 15 a. The structure of the switching transistor 102is not limited to the bottom gate type structure, but the structure canalso be a top gate type structure. Here, the top gate type structure isa structure in which the gate electrode 12 a is formed to the upper sideof the oxide semiconductor layer 14 a.

The capacitance element 103 is composed of a gate electrode 12 c, asource or drain electrode 15 d, and a gate insulating film 13. Thecapacitance element is composed of not only the above components, butalso can be composed of the gate electrode 12 c, an oxide semiconductorlayer, which is formed at the same time as the oxide semiconductorlayers 14 a and 14 b are formed, and the gate insulating film 13.Furthermore, the capacitance element 103 can be composed of the sourceor drain electrode 15 d, a metal layer, which is formed at the same timeas the back gate electrode 17 is formed, and an insulating layer 16.

The oxide semiconductor layers 14 a and 14 b form the channel layers(active layers) of the oxide semiconductor transistors (101, 102), andthe materials of the oxide semiconductor layers 14 a and 14 b caninclude oxide semiconductor materials such as ZnO-based materials. TheZnO-based materials can include, for example, ZnO or can includemixtures or compounds formed by ZnO including at least one material ofHf, Y, Ta, Zr, Ti, Cu, Ni, Cr, In, Ga, Al, Sn, and Mg. For example, suchZnO-based materials can include: ZnO; TaZnO; InZnO (IZO); or GaInZnO(Gallium Indium Zinc Oxide; GIZO).

Because such an oxide semiconductor transistor has a characteristic inwhich its threshold voltage and drain current vary in accordance withthe light amount of incoming light LIG, the oxide semiconductortransistor can be used as the photo transistor 101. Here, because it isunnecessary that the switching transistor 102 has a characteristic inwhich its threshold voltage and drain current vary in accordance withthe light amount of the incoming light LIG, the gate electrode 12 a isformed to the lower side of the oxide semiconductor layer 14 a and theback gate electrode 17 is formed to the upper side of the oxidesemiconductor layer 14 a as shown in FIG. 1 and FIG. 3. With this, theswitching transistor 102 is configured in such a way that the oxidesemiconductor layer 14 a of the switching transistor 102 is notirradiated with the incoming light LIG. In other words, the back gateelectrode 17 has a role of shielding or blocking the incoming light LIGinto the oxide semiconductor layer 14 a.

As shown in FIG. 1, the photo sensor device 1 includes: a substrate 10;an insulating layer 11 formed so as to wholly cover the substrate 10;the gate electrodes 12 a, 12 b, and 12 c formed on parts of theinsulating layer 11 respectively; and the gate insulating film 13 formedover the insulating layer 11 and the gate electrodes 12 a, 12 b, and 12c so as to cover the side surfaces and upper surfaces of the gateelectrodes 12 a, 12 b, and 12 c. The photo sensor device 1 furtherincludes: the oxide semiconductor layers 14 a and 14 b formed on partsof the gate insulating film 13; the source electrodes and drainelectrodes 15 a, 15 b, 15 c, and 15 d formed so as to cover both sidesurfaces of the oxide semiconductor layer 14 a and both side surfaces ofthe oxide semiconductor layer 14 b; and the transparent insulating layer16 formed so as to wholly cover the source electrodes and drainelectrodes 15 a, 15 b, 15 c, and 15 d and the oxide semiconductor layers14 a and 14 b. The photo sensor device 1 further includes: the back gateelectrode 17 formed on a part of the transparent insulating layer 16 soas to cover the oxide semiconductor layer 14 a; a transparent insulatinglayer 18 formed as a flattening film so as to wholly cover the uppersurface of the back gate electrode 17 and the upper surface of thetransparent insulating layer 16; wiring layers 19 a and 19 b formed onparts of the transparent insulating layer 18; and a transparentinsulating layer 20 formed as a passivation film so as to wholly coverthe upper surfaces of the wiring layers 19 a and 19 b and the uppersurface of the transparent insulating layer 18. Here, the wiring layer19 a is connected to the back gate electrode 17 through a via electrode,and the wiring layer 19 b is connected to the source electrode 15 cthrough a via electrode.

The substrate 10 can be formed by using a typical substrate materialsuch as glass, silicon, or a resin. The insulating layer 11, the gateinsulating film 13, the transparent insulating layer 16, the transparentinsulating layer 18, and the transparent insulating layer 20 can beformed using materials made of silicon oxide films. The films of theinsulating layer 11, the gate insulating film 13, the transparentinsulating layer 16, the transparent insulating layer 18, and thetransparent insulating layer 20 can be formed using a CVD method. Thegate electrodes 12 a, 12 b, and 12 c, the source and drain electrodes 15a, 15 b, 15 c, and 15 d, the back gate electrode 17, the wiring layers19 a and 19 b can be formed using conductive metals or conductive metaloxides. The films of the oxide semiconductor layers 14 a and 14 b can beformed using a sputtering method.

For example, in the case where the photo sensor device 1 is used for aphoto touch panel or a fingerprint sensor that are attached on a displaypanel, the gate electrodes 12 a, 12 b, and 12 c and the sourceelectrodes and drain electrodes 15 a, 15 b, 15 c, and 15 d can be formedusing transparent conductive materials such as ITO. Here, as shown inFIG. 1, in the case of an upper surface irradiation scheme where theupper surface of the photo sensor device 1 is irradiated with theincoming light LIG, because the back gate electrode 17 has a role ofshielding or blocking the irradiation of the incoming light LIG into theoxide semiconductor layer 14 a, it is preferable to form the back gateelectrode 17 using a nontransparent material. On the other hand, in thecase of a rear surface irradiation scheme where the rear surface of thephoto sensor device 1, that is, the substrate 10 is irradiated with theincoming light LIG, because the gate electrode 12 c has a role ofshielding or blocking the irradiation of the incoming light LIG into theoxide semiconductor layer 14 a, it is preferable to form the gateelectrode 12 c using a nontransparent material.

FIG. 4 is a diagram showing the characteristics of the drain current ofthe photo transistor 101 without light irradiation. FIG. 5 is a diagramshowing the characteristics of the drain current of the photo transistor101 with light irradiation. In FIG. 4 and FIG. 5, the vertical axisrepresents the value of the drain current of the photo transistor 101,and the horizontal axis represents the value of the gate voltage of thephoto transistor 101. Here, characteristics shown in dashed lines showthose in the case of the drain voltage being 1 V, and characteristicsshown in solid lines show those in the case of the drain voltage being10 V.

As can be understood from FIG. 4, in the case of the absence of lightirradiation, in a region where the gate potential of the phototransistor 101 is equal to or less than a threshold potential, that is,in an off-region where the photo transistor 101 is in an off-state(nonconductive), the values of the drain currents are very small, thatis, equal to or less than a measurable lower limit. Contrarily, as canbe understood from FIG. 5, in the case of the presence of lightirradiation, in the region where the gate potential of the phototransistor 101 is equal to or less than the threshold potential, thatis, in the off-region where the photo transistor 101 is in an off-state(nonconductive), the values of the drain currents become much larger incomparison with those in FIG. 4.

Because the photo transistor 101 according to the present invention hasa three-terminal structure as mentioned above, the values of the draincurrents of the photo transistor 101 in an off-state (also referred toas off-currents) can be used for judging whether there is lightirradiation or not as shown in FIG. 4 and FIG. 5. This is because itbecomes possible to detect whether there is light irradiation or not ina stable way by utilizing the fact that the signal ratios of theoff-currents of the photo transistor 101 in the case of the presence oflight irradiation to the off-currents in the case of the absence oflight irradiation are large.

As mentioned above, an oxide semiconductor transistor has a degradationmode that is referred to as light negative bias degradation in which thethreshold voltage of the oxide semiconductor transistor greatly changeswhen a negative bias is applied to the oxide semiconductor transistorwhile being irradiated with light. In particular, a trade-off, in whichthe optical degradation of the oxide semiconductor transistor isaccelerated as the optical sensitivity of the oxide semiconductortransistor is increased, becomes a problem. On the other hand, becausethe off-current of an oxide semiconductor transistor is very small, itbecomes possible to obtain the sufficient large signal ratios ofoff-currents in the case of the presence of light irradiation tooff-currents in the case of the absence of light irradiation by makingthe photo transistor 101 have a three-terminal structure and operate inthe off-region.

In addition, the amount of light irradiation between the phototransistor 101 and the switching transistor 102 can be controlled bychanging the positions of the gates of the elements 101 and 102 and theposition of the back gate electrode. With this, it becomes possible todetect whether there is light irradiation or not in a stable way.

Furthermore, because the optical degradation of the oxide semiconductortransistor shifts its threshold in the negative direction, it becomespossible to reduce an influence on the negative change of its thresholdby making a negative potential applied to the gate electrode at the timeof the oxide semiconductor transistor being in an off-state large.

Next, the illustrative circuit configuration example of the photo sensorcircuit using the photo transistor 101, the switching transistor 102,and the capacitance element 103 explained in FIG. 1 to FIG. 3 will beexplained.

(Circuit Configuration of Photo Sensor Circuit)

FIG. 6 is a circuit diagram for explaining the illustrativeconfiguration example of the photo sensor circuit according to theexample.

The photo sensor circuit SC includes a photo transistor 101 that is alight receiving element, a switching transistor 102, a switchingtransistor 104, and a capacitance element 103. In addition, a resetcircuit RS connected to the photo sensor circuit SC is depicted in FIG.6. The reset circuit RS includes a switching transistor 105.

Here, each of the switching transistors 104 and 105 is formed by anoxide semiconductor transistor having a back gate electrode 17 as is thecase with the switching transistors 102 explained in FIG. 1 and FIG. 3.In FIG. 6, each of the switching transistors 102, 104, and 105 isconfigured for its back gate electrode 17 to be connected to its sourceelectrode. The switching transistors 102, 104, and 105 are sometimesreferred to as a first switching transistor, a second switchingtransistor, and a third switching transistor respectively.

The photo transistor 101 includes: a gate connected to a wiring (a firstwiring) L1 to which a first gate control signal SVG is supplied; asource connected to a wiring (a second wiring) L2 to which a firstsource control signal SVS is supplied; and a drain. The switchingtransistor 102 includes: a gate connected to a wiring (a third wiring)L3 to which a second gate control signal DCH is supplied; a sourceconnected to a wiring (a fourth wiring) L4 to which a second sourcecontrol signal VR1 is supplied; and a drain connected to the drain ofthe photo transistor 101. The capacitance element 103 includes: a firstterminal connected to the drain of the photo transistor 101; and asecond terminal connected to the source of the switching transistor 102.The switching transistor 104 includes: a gate connected to a gate lineG1; a source connected to a signal line Sig1; and a drain connected tothe first terminal of the capacitance element 103.

The capacitance element 103 has a function for storing charge inaccordance with irradiated light amount when the photo transistor 101 isirradiated with the incoming light LIG. The charge stored in thecapacitance element 103 is read out to the signal line Sig1 through thesource-drain channel of the switching transistor 104 that is turned onwhen the gate line G1 is set in a selective level.

The reset circuit RS includes the switching transistor 105. Theswitching transistor 105 includes: a gate connected to a wiring (a fifthwiring) L5 to which a reset signal RST is supplied; a source connectedto the wiring L4 to which the second source control signal VR1 issupplied; and a drain connected to the Sig1. Here, in the case whereplural photo sensor circuits SC are formed, the wiring L4 to which thesecond source control signal VR1 is supplied is connected to the secondterminal of the capacitance element 103 of each photo sensor circuit SC.

Next, the illustrative entire configuration of a photo sensor device 1including plural photo sensor circuits SC and plural reset circuits RS,which are explained in FIG. 6, will be explained.

(Entire Configuration of Photo Sensor Device)

FIG. 7 is a block diagram showing the illustrative entire configurationof the photo sensor device according to the example. Here, in order toavoid the complexity of the drawing, photo transistors 101, switchingtransistors 102 and 104, capacitance elements 103, and plural wirings(L1 top L4) except for gate lines G and signal lines S are not depictedin FIG. 7, although those are depicted in FIG. 6.

The photo sensor device 1 is formed, for example, on a photo sensorpanel LPNL of a rectangular shape. An array unit ARR is formed on thephoto sensor panel LPNL and formed in the array unit ARR are pluralphoto sensor circuits (SC11, SC12, . . . , SCmn) that are disposed, forexample, in an m-by-n matrix shape.

Corresponding to the number m of the rows, m gate lines G (G1, G2, G3, .. . , Gm) are provided, and corresponding to the number n of thecolumns, n signal lines S (Sig1, Sig2, Sig3, . . . , Sign) are provided.

The gate line G1 is connected to the photo sensor circuits SC11, SC12,SC13, . . . , SC1n disposed in the first row, the gate line G2 isconnected to the photo sensor circuits SC21, SC22, SC23, . . . , SC2ndisposed in the second row, and the gate line G3 is connected to thephoto sensor circuits SC31, SC32, SC33, . . . , SC3n disposed in thethird row. In a similar way, any of the other gate lines is connected toplural photo sensor circuits disposed in the relevant row.

On the other hand, the signal line Sig1 is connected to the photo sensorcircuits SC11, SC21, SC31, . . . , SCm1 disposed in the first column,the signal line Sig2 is connected to the photo sensor circuits SC12,SC22, SC32, . . . , SCm2 disposed in the second column, and the signalline Sig3 is connected to the photo sensor circuits SC13, SC23, SC33, .. . , SCm3 disposed in the third column. In a similar way, any of theother signal lines is connected to plural photo sensor circuits disposedin the relevant column.

As described above, the plural photo sensor circuits are connected tothe plural gate lines and the plural signal lines in such a way that onephoto sensor circuit is connected to one gate line and one signal line.

Plural reset circuits (RS1, RS2, RS3, . . . , RSn), a reset controlcircuit RSTL, a gate line drive circuit GD, and a readout circuit RA areformed in the peripheral region of a region, in which the array unit ARRis formed, on the photo sensor panel LPNL.

The plural reset circuits (RS1, RS2, RS3, . . . , RSn) are providedcorresponding to the respective columns on a one-to-one basis. The resetcircuit RS1 is connected to the signal line Sig1, the reset circuit RS2is connected to the signal line Sig2, and the reset circuit RS3 isconnected to the signal line Sig3. In a similar way, any of the otherreset circuits is connected to the relevant signal line. Furthermore,the reset signal RST output from the reset control circuit RSTL is inputinto the plural reset circuits (RS1, RS2, RS3, . . . , RSn) through awiring.

The gate line drive circuit GD is connected to the m gate lines G (G1,G2, G3, . . . , Gm), and the gate line drive circuit GD has a functionfor setting a desired gate line of the m gate lines G (G1, G2, G3, . . ., Gm) in a selective level.

The readout circuit RA is connected to the n signal lines S (Sig1, Sig2,Sig3, . . . , Sign). For example, if the gate line drive circuit GD setsone gate line in a selective level in its readout operation, pluralphoto sensor circuits connected to the gate line, which are set in aselective level, are selected. As a result, charges stored incapacitance elements in the plural selected photo sensor circuits areinput into the readout circuit RA as readout data via the n signallines. It is possible for the readout circuit RA to have, for example,an analog-to-digital conversion function for converting analog signalsto digital signals. In this case, analog signals such as the amounts ofcharges read out from the capacitance elements of the photo sensorcircuits are converted into digital signals, and the digital signals canbe transmitted, for example, to a host device.

In addition, a control circuit SVGL for generating the first gatecontrol signal SVG, a control circuit SVSL for generating the firstsource control signal SVS, a control circuit DCHL for generating thesecond gate control signal DCH, and a control circuit VR1L forgenerating the second source control signal VR1 are formed in theperipheral region of the region, in which the array unit ARR is formed,on the photo sensor panel LPNL.

Next, the behavior of the photo sensor device 1 explained in FIG. 7 willbe described.

(Drive Method of Photo Sensor Device)

FIG. 8 is a timing chart for explaining the behavior example of thephoto sensor device 1 according to the example. The timing chart shownin FIG. 8 shows one sensor sequence. The one sensor sequence includes: asensor reset period SRP; a capacitor reset period CRP; an exposureperiod EXP; and a readout period RAP. Such a sensor sequence isexecuted, for example, continuously or several times in a predefinedperiod, so that touch detection or fingerprint detection is executed.

The sensor reset period SRP is a period during which the photo responseof the photo transistor 101 is disabled by flowing a reset currentthrough the photo transistor 101 using the switching transistor 105, andthe state of the photo transistor 101 is brought back to its initialstate. During the sensor reset period SRP, the photoelectric current ofthe photo transistor 101 is instantaneously reset by turning the bias ofthe gate electrode of the photo transistor 101 positive.

The capacitor reset period CPR is a period that exists before theexposure period EXP and during which the charge stored in thecapacitance element 103 is changed into a constant potential using theswitching transistor 102.

The exposure period EXP is a period during which the photo transistor101 is enabled to function as a light receiving element, and charge isstored in the capacitance element 103 in accordance with light amountirradiated from the incoming light LIG. During the exposure period EXP,sufficient signal intensity can be secured by turning the bias of thegate electrode of the photo transistor 101 negative.

The readout period RAP is a period during which a signal proportional tothe light amount irradiated from the incoming light LIG is read out fromthe charge newly stored in the capacitance element 103 by turning theswitching transistor 104 on after the exposure period EXP.

In such a way as above, it becomes possible to quantitatively detect theintensity of light irradiated from the incoming light LIG into the phototransistor 101.

One sensor sequence will be explained with reference to FIG. 8.

A period t1 shows a preparation period for preparation executed beforethe sensor reset period SRP. During the period t1, the first gatecontrol signal SVG is set in a high level such as 10 V, and the resetsignal RST is also set in a high level such as 10 V. Furthermore, thesecond gate control signal DCH is set in a low level such as −5 V, thefirst source control signal SVS is set in a low level such as −1 V, thesecond source control signal VR1 is set in a high level such as 0 V, andall the gate electrodes G1 to Gm are set in a low level (nonselectivelevel) such as −5 V. Under this condition, the photo transistor 101 andthe switching transistor 105 are in an on-state.

After the period t1, the sensor reset period SRP is started. There areplural periods t2 during the sensor reset period SRP. The periods t2respectively show periods during which the levels of the gate electrodes(G1 to Gm) are respectively and sequentially shifted from a nonselectivelevel such as −5 V to a selective level such as 10 V and afterwardshifted to a nonselective level. When the gate electrode G1 is set in aselective level, the photo response of a photo transistor 101 in each ofphoto sensor circuits (SC11, SC12, . . . , SC1n), which are located inthe first row and connected to the gate electrode G1, is disabled, andthe photo transistor 101 is brought back to its initial state. When thegate electrode G2 is set in a selective level, the photo response of aphoto transistor 101 in each of photo sensor circuits (SC21, SC22, . . ., SC2n), which are located in the second row and connected to the gateelectrode G2, is disabled, and the photo transistor 101 is brought backto its initial state. Similar operations is executed when the other gateelectrodes (G3 to Gm) are sequentially set in a selective level, so thatthe photo transistors 101 in all the photo sensor circuits of the sensorarray ARR are brought back to their initial states. To put itconcretely, the switching transistors 105, the switching transistors104, and the photo transistors 101 are set in an on-state. Therefore,reset currents flow through wirings to which second source controlsignals VR1 are supplied to wirings to which first source controlsignals SVS are supplied via the source-drain channels of switchingtransistors 105, the signal lines (Sig1 to Sign), the source-drainchannels of switching transistors 104, and the source-drain channels ofphoto transistors 101 respectively.

A period t3 shows a period during which the selection operations of allthe gate electrodes (G1 to Gm) have already finished.

A period t4 is provided after the period t3 and shows a preparationperiod for preparation that is executed before a capacitance resetperiod CRP. During the period t4, the level of the first gate controlsignal SVG is shifted from a high level such as 10 V to a low level suchas −5 V.

A period t5 shows a capacitance reset period CPF provided after theperiod t4. During the period t5, the level of the second gate controlsignal DCH is shifted from a low level such as −5 V to a high level suchas 10 V, and the level of the second source control signal VR1 isshifted from a high level such as 0 V to a low level such as −1 V. Inaddition, the level of the first source control signal SVS is shiftedfrom a low level such as −1 V to a high level such as 5 V. With this, ineach of the photo sensor circuits (SC11, SC12, . . . , SCnm), aswitching transistor 102 is set in an on-state, and the charge stored ina capacitance element 103 is discharged or charged so as to be changedinto a constant potential.

The exposure period EXP is provided after the period t5. The exposureperiod EXP is started after the level of the second gate control signalDCH is shifted from a high level such as 10 V to a low level such as −5V and the level of the second source control signal VR1 is shifted froma low level such as −1 V to a high level such as 0 V. At this time, thephoto transistors 101, the switching transistors 102, and the switchingtransistors 104 in all the photo sensor circuits (SC11, SC12, . . . ,SCnm) are set in an off-state. Under this condition, if the array unitARR is irradiated with the incoming light LIG, each of the phototransistors 101 in the photo sensor circuits (SC11, SC12, . . . , SCnm)functions as a light receiving element, and charge is stored in therelevant capacitance element 103 in accordance with the light amountirradiated from the incoming light LIG. The end of the exposure periodEXP is decided by shifting the level of the reset signal RST from a highlevel such as 10 V to a low level such as −5 V. In other words, theexposure period EXP can be decided by a time interval between a shift tothe low level of the second gate control signal DCH and a shift to thelow level of the reset signal RST. Therefore, the length of the exposureperiod EXP can be changed by controlling this time interval.

A period t6 is a preparation period before the readout period RAP.During the period t6, the reset signal RST is set in a low level.

After the period t6, the readout period RAP is started. The readoutperiod RAP includes plural periods t7. The periods t7 respectively showperiods during which the levels of the gate electrodes (G1 to Gm) arerespectively and sequentially shifted from a nonselective level such as−5 V to a selective level such as 10 V and afterward shifted to anonselective level. When the gate electrode G1 is set in a selectivelevel, the charges newly stored in the respective capacitance elements103 in the photo sensor circuits (SC11, SC12, . . . , SC1n), which arelocated in the first row and connected to the gate electrode G1, areread out to the signal lines Sig 1 to Sign by setting the relevantswitching transistors 104 in an on-state, and input into the readoutcircuit RA. By sequentially setting the levels of all the gateelectrodes (G1 to Gm) in a selective level, the charges of all thecapacitance elements 103 of all the photo sensor circuits (SC11, SC12, .. . , SCnm) in the array unit ARR are input into the readout circuit RA.

A period t8 is provided after the end of the readout period RAP. Afterthe period t8, the level of the reset signal RST is shifted from a lowlevel to a high level, so that all the signals are set in states beforethe start of the period t1.

FIG. 9 is a characteristic diagram for explaining the characteristic ofa photoelectric current of an oxide semiconductor transistor accordingto a comparative example. In FIG. 9, the vertical axis represents adrain current and the horizontal axis represents time (second: s). FIG.9 shows the change of the drain current (photoelectric current) in thecase where a simple two-terminal element or an oxide semiconductortransistor into which a reset bias is not applied is irradiated withlight during a period from 10 seconds to 30 seconds in the horizontalaxis. As can be understood from FIG. 9, when the light is irradiated(light-irradiation ON), the drain current of the oxide semiconductortransistor increases, and when the irradiation of the light is stopped(light-irradiation OFF), the drain current of the oxide semiconductortransistor decreases, but the oxide semiconductor transistor has acharacteristic that the drain current decreases very slowly even if theirradiation of the light is stopped (light-irradiation OFF). In otherwords, the characteristic of the oxide semiconductor transistor is thatthe drain current (photoelectric current), which once increased by thelight irradiation, does not decrease quickly, and continues to have ahigh current value higher than the value of the drain current before thelight irradiation for more than one hour.

FIG. 10 is a diagram for explaining the photoelectric current of theoxide semiconductor transistor according to the comparative example. InFIG. 10, the vertical axis represents a drain current and the horizontalaxis represents time (second: s). Furthermore, applied voltages to anLED element adopted as a light emitting element are shown in the upperpart of FIG. 10. To put it concretely, FIG. 10 shows the change of thedrain current (photoelectric current) of an oxide semiconductortransistor in the case where a simple two-terminal element or the oxidesemiconductor transistor into which a reset bias is not applied isirradiated with light while the light emitting amount of the LED elementis being changed. As can be understood from FIG. 10, because the simpletwo-terminal element or the oxide semiconductor transistor into which areset bias is not applied has a very slow light relaxation, stablesignal intensity cannot be obtained, so that it is understandable thatit is difficult to form a quantitative photo sensor element using anoxide semiconductor transistor.

FIG. 11 is a diagram for explaining the photoelectric current of theoxide semiconductor transistor according to the example. In FIG. 11, thevertical axis represents a drain current and the horizontal axisrepresents time (second: s). Furthermore, applied voltages to an LEDelement are shown in the upper part of FIG. 11 as is the case with FIG.10. FIG. 11 shows the change of the drain current (photoelectriccurrent) of an oxide semiconductor transistor (the photo transistor) 101in the case where an oxide semiconductor transistor 101 is adopted asthe oxide semiconductor transistor, and a positive voltage is applied tothe gate terminal G1 of the oxide semiconductor transistor 101 as areset pulse at the time of sensing start or sensing stop. As can beunderstood from FIG. 11, if a positive voltage is applied to the gateterminal at the time of sensing start or sensing stop, the photoelectriccurrent can be eliminated instantaneously. With this, a refresh periodcan be reduced to, for example, 100 msec or shorter. Therefore, stablesignal intensity can be obtained, so that it becomes possible to form aquantitative photo sensor element using an oxide semiconductortransistor.

FIG. 12 is a diagram for illustratively showing the gate bias potential(Vg) of the gate electrode of the oxide semiconductor transistor 101 atthe time of the reset pulse being applied in FIG. 11. A positivepotential, which is a high level voltage (10 V), can be applied as areset pulse to the gate electrode of the oxide semiconductor transistor101 for 100 msec, for example. In FIG. 12, a time interval between tworeset pulses is illustratively set to 900 msec. Here, a period duringwhich a reset pulse is in a high level in FIG. 12 can be considered tobe equal to one period t2 in the sensor reset period SPR shown in FIG.8.

FIG. 13 is a diagram for illustratively showing the drain bias potential(Vd) of the drain electrode of the oxide semiconductor transistor 101 atthe time of the reset pulse being applied in FIG. 11. The drainelectrode of the oxide semiconductor transistor 101 is set in a highlevel (0 V) for 500 msec, for example, and afterward the drain electrodeis set in a low level (−1 V) for 500 msec, for example. Here, a periodduring which the bias potential (Vd) is set in a low level (−1 V) inFIG. 13 can be considered to be equal to the capacitance reset periodCRP (period t5) shown in FIG. 8.

According to the example, the following one or plural advantageouseffects can be obtained.

1) The photo transistor 101 is defined as an oxide semiconductor elementincluding three terminals (a gate, a source, and a drain) with the oxidesemiconductor layer 14 b as a channel layer (an active layer). Becausethe photo transistor 101 has a three-terminal structure, the values ofthe drain currents (off currents) of the photo transistor 101 in anoff-state can be used for judging whether there is light irradiation ornot as shown in FIG. 4 and FIG. 5. This is because it becomes possibleto detect whether there is light irradiation or not in a stable way byutilizing the fact that the signal ratios of the off-currents of thephoto transistor 101 in the case of the presence of light irradiation tothe off-currents in the case of the absence of light irradiation arelarge.

2) The switching transistor 102 (104 or 105) is defined as an oxidesemiconductor element including four terminals (a gate, a source, adrain, and a back gate) with the oxide semiconductor layer 14 a as achannel layer (an active layer). With this, the switching transistor 102is configured in such a way that the oxide semiconductor layer 14 a ofthe switching transistor 102 is not irradiated with the incoming lightLIG. The back gate electrode 17 has a role of shielding or blocking theincoming light LIG into the oxide semiconductor layer 14 a.

3) In the above description 2), it is also conceivable that theswitching transistor 102 (104 or 105) adopts a dual gate drive scheme inwhich both gate electrode 12 a and back gate electrode 17 are driven. Inaddition, it is also conceivable that the switching transistor 102 (104or 105) is configured in such a way that the back gate electrode 17 isconnected to the source electrode 15 a. The switching transistor 102(104 or 105) is not only limited to be configured as a bottom gate type,but also can be configured as a top gate type.

4) The photo sensor circuit includes the photo transistor 101; theswitching transistors 102 and 104, and the capacitance element 103. Thephoto transistor 101 includes: the gate connected to the wiring to whichthe first gate control signal SVG is supplied; the source connected tothe wiring to which the first source control signal SVS is supplied; andthe drain. The switching transistor 102 includes: the gate connected tothe wring to which the second gate control signal DCH is supplied; thesource connected to the wiring to which the second source control signalVR1 is supplied; and the drain connected to the drain of the phototransistor 101. The capacitance element 103 includes: the first terminalconnected to the drain of the photo transistor 101; and the secondterminal connected to the source of the switching transistor 102. Theswitching transistor 104 includes: the gate connected to the gate lineG1; and the source connected to the signal line Sig1; and the drainconnected to the first terminal of the capacitance element 103. Thecharge stored in the capacitance element 103 is read out to the signalline Sig1 through the source-drain channel of the switching transistor104 that is turned on when the gate line G1 is set in a selective level.

5) In the above description 4), the reset circuit RS is connected to thephoto sensor circuit. The reset circuit RS includes the switchingtransistor 105. The switching transistor 105 includes: the gateconnected to the wiring to which the reset signal RST is supplied; thesource connected to the wiring to which the second source control signalVR1 is supplied; and the drain connected to the signal line Sig1.

6) In the behavior of the photo sensor device 1 including the photosensor circuit and the reset circuit RST, one sensor sequence includes:the sensor reset period SRP; the capacitance reset period CRP; theexposure period EXP; and the readout period RAP. The sensor reset periodSRP is a period during which the photo response of the photo transistor101 is disabled by flowing a reset current through the photo transistor101 using the switching transistor 105, and the state of the phototransistor 101 is brought back to its initial state. The capacitor resetperiod CPR is a period that exists before the exposure period EXP andduring which the charge stored in the capacitance element 103 is changedinto a constant potential (is initialized) using the switchingtransistor 102. The exposure period EXP is a period during which thephoto transistor 101 is enabled to function as a light receivingelement, and charge is stored in the capacitance element 103 inaccordance with the light amount irradiated from the incoming light LIG.The readout period RAP is a period during which a signal proportional tothe light amount irradiated from the incoming light LIG from the chargenewly stored in the capacitance element 103 by turning the switchingtransistor 104 on after the exposure period EXP.

Because the sensor reset period SRP is prepared, the photoelectriccurrent induced by the photo response of the photo transistor 101 can beeliminated in a short time. Furthermore, because the capacitance resetperiod CRP is prepared, the charge stored in the capacitance element 103is changed into a constant potential (is initialized) before theexposure period EXP. With this, stable signal intensity can be obtained,so that it becomes possible to provide the photo sensor device 1 thatcan execute a stable behavior.

APPLICATION EXAMPLES

Next, application examples will be explained with reference to theaccompanying drawings.

Application Example 1

FIG. 14 is a plan view conceptually showing a display device accordingto Application Example 1. The display device DSP according toApplication Example 1 shows a configuration example of the photo sensordevice 1 according to the example that is used as a fingerprint sensor.In this example, the photo sensor device 1 is pasted on a desired regionof the display panel PNL of the display device DSP. This region is, forexample, a region of the display panel PNL that is assigned to afingerprint detection region. The display panel PNL includes a displayregion DA, and the display region DA includes plural display pixels PXdisposed in a matrix shape. As the display panel PNL, a liquid crystalpanel can be used, for example. In this case, liquid crystal displaypixels can be used for the plural display pixels PX respectively.

APPLICATION EXAMPLE 2

FIG. 15 is a plan view conceptually showing a display device accordingto Application Example 2. The display device DSP1 according toApplication Example 2 shows a configuration example of the photo sensordevice 1 according to the example that is used as a touch sensor. Inthis example, the photo sensor device 1 is pasted on the display regionDA of the display panel PNL of the display device DSP1. As is the casewith Application Example 1, the display panel PNL includes the displayregion DA, and the display region DA includes plural display pixels PXdisposed in a matrix shape. The photo sensor device 1 according toApplication Example 2 can be used not only as the touch sensor, but alsoas a fingerprint sensor.

Modification Example

FIG. 16 is a plan view conceptually showing a display device accordingto a modification example. In FIG. 14 and FIG. 15, the configurationexample in which the photo sensor device 1 according to the example ispasted on the display region DA of the display panel PNL is shown. In adisplay device DSP2 according to the modification example, an example inwhich both display pixels PX and photo sensor circuits SC are formed inthe display region DA of a display panel PNL is shown.

FIG. 17 is a circuit diagram showing a configuration example of adisplay pixel PX and a photo sensor circuit SC that can be adopted forthe display device according to the modification example. FIG. 17illustratively shows a configuration in which the photo sensor circuitSC shown in FIG. 6 and the display pixel PX are combined. Because theconfiguration of the photo sensor circuit SC is the same as that shownin FIG. 6, an explanation thereof will be omitted.

The display pixel PX includes one thin film transistor TFT as aswitching element. The gate of the thin film transistor TFT is connectedto a pixel gate line PXG1 that is a scanning line, one of thesource/drain of the thin film transistor TFT is connected to a pixelsource line PXS1 that is a signal line, and the other of thesource/drain is connected to a pixel electrode PE. In addition, a commonelectrode Vcom, which gives a common potential Vcom to all displaypixels PX, is provided for the display pixel PX, and a liquid crystallayer LC is provided between the pixel electrode PE and the commonelectrode Vcom. The display pixel PX is configured in such a way thatthe thin film transistor TFT is turned on or off on the basis of a drivesignal supplied through the pixel gate line PXG1, and when the thin filmtransistor TFT is in an on-state, a pixel voltage is applied to thepixel electrode PE on the basis of a display signal supplied from thepixel source line PXS1, so that the liquid crystal layer LC is driven byan electric field between the pixel electrode PE and the commonelectrode Vcom.

Although FIG. 17 shows the configuration in which one photo sensorcircuit SC is provided for one display pixel PX, this combination is notonly one. One photo sensor circuit SC can be provided for plural displaypixels PX. For example, one photo sensor circuit SC can be provided forfive display pixels PX.

In the application examples and the modification example, a liquidcrystal display device is disclosed as an example of a display device.This liquid crystal device can be used for various kinds of devices suchas a smart phone; a tablet terminal; a cellular phone terminal; apersonal computer; a TV receiver; an in-vehicle device, a game machine;a digital camera; and a video camera. Here, the main configurationsdisclosed in the application examples and the modification example canbe applied to a self-luminous type display device (OLED) includingorganic electroluminescence display elements and the like; an electronicpaper type display device including electrophoretic elements and thelike; a display device using MEMS (Micro Electro Mechanical Systems); adisplay device using electrochromism; and the like.

Because the photo transistor 101 using an oxide semiconductor layer hasa very low off current as shown in FIG. 4, the photo transistor 101 canhold a very low off current if there is no light irradiation. Therefore,it is also possible that an exposure time (exposure period EXP) and areadout time (readout period RAP) are changed freely in accordance withan object or irradiated light (a global shutter). For example, in thecase where a combination of a display device using OLEDs and a displaydevice using liquid crystals is used, it is possible to drive the photosensor device 1 or independently activate the photo sensor device 1between the display operations of the display device using OLEDs or thedisplay device using liquid crystals. Furthermore, if a short readouttime (readout period RAP) is adopted, thin film transistors (TFT) ofpolycrystalline low temperature polysilicon (LIPS) can be used for thereadout transistor (the switching transistor) 104 and the resettransistor 105.

All kinds of photo sensor devices and display devices that can beobtained by those skilled in the art through appropriately modifyingdesigns on the basis of the photo sensor devices and display devicesdescribed above as the embodiments of the present invention fall withinthe scope of the present invention as long as these kinds of photosensor devices and display devices do not deviate from the gist of thepresent invention.

It should be understood that, if various alternation examples andmodification examples are easily conceived by those skilled in the artin the idea of the present invention, those alternation examples andmodification examples also fall within the scope of the presentinvention. For example, devices obtained in the case where those skilledin the art appropriately add components to the above-described variousembodiments, delete components from the above-described variousembodiments, add processes to original processes for the above-describedvarious embodiments, omit processes from the original processes, oralter conditions for implementing the above-described variousembodiments fall within the scope of the present invention as long asthe devices do not deviate from the gist of the present invention.

In addition, it should be obviously understood that other operationaleffects, which are brought about by the above-described embodiments,clear from the descriptions of the present specification, and can beaccordingly conceived by those skilled in the art, are brought about bythe present invention.

Various inventions can be achieved by appropriately combining pluralcomponents disclosed in the above-described embodiments. For example, anew invention will be achieved by deleting some components from all thecomponents included in one of the above-described embodiments.Alternatively, another new invention will be achieved by appropriatelycombining components from the above-described embodiments.

REFERENCE SIGNS LIST

1 . . . Photo Sensor Device,

SC . . . Photo Sensor Circuit,

LIG . . . Incoming Light,

101 . . . Photo Transistor,

102, 104, 105 . . . Switching Transistor,

103 . . . Capacitance Element,

14 a, 14 b . . . Oxide Semiconductor Layer (Channel Layer),

12 a, 12 b . . . Gate Electrode,

15 a, 15 b, 15 c . . . Drain Electrode and Source Electrodes,

17 . . . Back Gate Electrode,

RS . . . Reset Circuit,

DSP . . . Display Device

1-16. (canceled)
 17. A photo sensor device comprising: a gate line; asignal line; and a photo sensor circuit connected to the gate line andthe signal line, wherein the plural photo sensor circuit includes: aphoto transistor; a first switching transistor; a second switchingtransistor; and a capacitance element, the photo transistor includes: agate connected to a first wiring; a source connected to a second wiring;and a drain, the first switching transistor includes: a gate connectedto a third wiring; a source connected to a fourth wiring; and a drainconnected to the drain of the photo transistor, the capacitance elementincludes: a first terminal connected to the drain of the phototransistor; and a second terminal connected to the source of the firstswitching transistor, the second switching transistor includes: a gateconnected to the relevant gate line; a source connected to the relevantsignal line; and a drain connected to the first terminal of thecapacitance element, and each of the photo transistor and the firstswitching transistor includes an oxide semiconductor layer as a channellayer.
 18. The photo sensor device according to claim 17 furthercomprising a reset circuit including a third switching transistor,wherein the third switching transistor includes: a gate connected to afifth wiring to which a reset signal is supplied; a source connected tothe fourth wiring; and a drain connected to the signal line.
 19. Thephoto sensor device according to claim 17, each of the photo transistorand the first switching transistor includes an oxide semiconductor layeras a channel layer.
 20. The photo sensor device according to claim 18,the third switching transistor further includes an oxide semiconductorlayer as a channel layer.
 21. The photo sensor circuit according toclaim 20, wherein each of the gate of the photo transistor, the gate ofthe first switching transistor, the gate of the second switchingtransistor, and the gate of the third switching transistor is formed toone of the lower side and the upper side of the oxide semiconductorlayer of the relevant transistor; each of the first switchingtransistor, the second switching transistor, and the third switchingtransistor includes a back gate; and the back gate is formed to theother of the lower side and the upper side of the oxide semiconductorlayer of the relevant switching transistor.
 22. The photo sensor deviceaccording to claim 21, wherein the back gate is connected to the sourceof the relevant switching transistor.
 23. The photo sensor deviceaccording to claim 17 including: a first period during which the phototransistor and the second switching transistor are set in an on-state,and the first switching transistor is set in an off-state; a secondperiod that succeeds the first period and during which the phototransistor and the second switching transistor are set in an off-state,and the first switching transistor is set in an on-state; a third periodthat succeeds the second period and during which, while the phototransistor, the first switching transistor, and the second switchingtransistor are set in an off-state, charge is stored in the capacitanceelement by light irradiation; and a fourth period that succeeds thethird period and during which, while the photo transistor and the firstswitching transistor are set in an off-state and the second switchingtransistor is set in an on-state through the gate line, the chargestored in the capacitance element is read out through the signal line.24. The photo sensor device according to claim 18 including: a firstperiod during which the photo transistor and the second switchingtransistor are set in an on-state, and the first switching transistor isset in an off-state; a second period that succeeds the first period andduring which the photo transistor and the second switching transistorare set in an off-state, and the first switching transistor is set in anon-state; a third period that succeeds the second period and duringwhich, while the photo transistor, the first switching transistor, andthe second switching transistor are set in an off-state, charge isstored in the capacitance element by light irradiation; and a fourthperiod that succeeds the third period and during which, while the phototransistor and the first switching transistor are set in an off-stateand the second switching transistor is set in an on-state through thegate line, the charge stored in the capacitance element is read outthrough the signal line.
 25. The photo sensor device according to claim24, wherein the third switching transistor is set in an on-state duringthe first period by the reset signal.